Influence of the erbium and oxygen content on the electroluminescence of epitaxially grown erbium-doped silicon diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118893
Reference12 articles.
1. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
2. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon
3. Optical activation and excitation mechanisms of Er implanted in Si
4. Incorporation of high concentrations of erbium in crystal silicon
5. Evaluation of erbium‐doped silicon for optoelectronic applications
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2. Erbium–oxygen interactions in crystalline silicon;Semiconductor Science and Technology;2011-03-11
3. Si:Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.54 μm;Semiconductors;2010-03
4. Influence of exposure to 980 nm laser radiation on the luminescence of Si:Er/O light-emitting diodes;Journal of Applied Physics;2008-12-15
5. Electroluminescence at 1.54 μm in Si:Er/Si structures grown by sublimation molecular-beam epitaxy;Semiconductors;2006-07
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