Investigation of ionized impurity scattering in GaAs and InP using hydrostatic pressure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95039
Reference9 articles.
1. Evidence for alloy scattering from pressure-induced changes of electron mobility in In1−xGaxAsyP1−y
2. The k.p interaction in InP and GaAs from the band-gap dependence of the effective mass
3. The influence of Cr on the mobility of electrons in GaAs FETs
4. Electron mobility in heavily doped gallium arsenide due to scattering by potential fluctuations
5. Theory of Impurity Scattering in Semiconductors
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1. Evidence of localized boron impurity states in (B,Ga,In)As in magnetotransport experiments under hydrostatic pressure;Physical Review B;2011-01-13
2. Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction;Applied Physics Letters;2001-12-31
3. Effect of pressure on the transport properties of (In, Ga)As;Journal of Applied Physics;1988-09
4. Semiconductors at high pressure: New physics with the diamond-anvil cell;Contemporary Physics;1987-11
5. Electron mobility in heavily doped indium phosphide due to scattering by potential fluctuations;Semiconductor Science and Technology;1987-08-01
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