Electronic properties of aluminum/CdZnTe interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4804365
Reference23 articles.
1. Single-charge-carrier-type sensing with an insulated Frisch ring CdZnTe semiconductor radiation detector
2. Characterization of Low-Defect ${\rm Cd}_{0.9}{\rm Zn}_{0.1}{\rm Te}$ and CdTe Crystals for High-Performance Frisch Collar Detectors
3. Optimal width of barrier region in X/γ-ray Schottky diode detectors based on CdTe and CdZnTe
4. Fabrication of high-performance CdZnTe quasi-hemispherical gamma-ray CAPture plus detectors
5. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. On the current transport mechanism in metal–semiconductor–metal structured CdZnTe radiation detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2020-03
2. Atomic and electronic structure of CdTe/metal (Cu, Al, Pt) interfaces and their influence to the Schottky barrier;Journal of Applied Physics;2016-11-14
3. Effects of Ga–Te interface layer on the potential barrier height of CdTe/GaAs heterointerface;Physical Chemistry Chemical Physics;2016
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