Fully epitaxial magnetic tunnel junction on a silicon wafer
Author:
Affiliation:
1. Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan
Funder
ImPACT Program of Council for Science, Technology and Innovation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5116055
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1. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
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4. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
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