Effect of vacancies on oxygen precipitation in germanium-doped Czochralski silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3357380
Reference25 articles.
1. The Heterogeneous Precipitation of Silicon Oxides in Silicon
2. Surface‐ and inner‐microdefects in annealed silicon wafer containing oxygen
3. Dislocation pinning effect of oxygen atoms in silicon
4. Investigation of oxygen distribution in electromagnetic CZ–Si melts with a transverse magnetic field using 3D global modeling
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1. Comprehensive understanding on germanium-doping effects on oxygen precipitation in Czochralski silicon wafers with a prior rapid thermal anneal;Applied Physics A;2021-11
2. Enhanced optical absorption of rutile TiO2 through (Sm, C) codoping: a first-principles study;Optical and Quantum Electronics;2021-01-25
3. Effects of nitrogen doping on vacancy-oxygen complexes in neutron irradiated Czochralski silicon;Materials Science in Semiconductor Processing;2019-08
4. Thermal history effect on the nucleation of oxygen precipitates in germanium doped Cz-silicon studied by high-energy X-ray diffraction;Journal of Crystal Growth;2017-12
5. Formation kinetics and mechanism of metastable vacancy-dioxygen complex in neutron irradiated Czochralski silicon;Superlattices and Microstructures;2017-07
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