Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2945892
Reference13 articles.
1. Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs
2. Auger recombination in InGaN measured by photoluminescence
3. Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes
4. Optical Process for Liftoff of Group III-Nitride Films
5. InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off
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