The influence of Sb content and dots size of InAs/GaAs(1-x)Sbx quantum dot on type I-type II band alignment and carrier dynamics-Reference-Cited by-同舟云学术

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The influence of Sb content and dots size of InAs/GaAs(1-x)Sbx quantum dot on type I-type II band alignment and carrier dynamics

Published:2017-12-14 Issue:22 Volume:122 Page:225701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Li Yaqian¹,Ji Lian¹,Lu Shulong²,Ding Chao¹,Zhou Jianqiu¹³

Affiliation:

1. School of Energy Science and Engineering, Nanjing Tech University, Nanjing, Jiangsu 210000, China

2. Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Science, Su Zhou, Jiang Su 210000, China

3. School of Mechanical and Electrical Engineering, Wuhan Institute of Technology, Wuhan, Hubei 430070, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4997338

Reference27 articles.

1. Effect of Sb induced type II alignment on dynamical processes in InAs/GaAs/GaAsSb quantum dots: Implication to solar cell design

2. Size-controlled Si quantum dots embedded in B-doped SiNx/Si3N4 superlatice for Si quantum dot solar cells

3. Type-II InP quantum dots in wide-bandgap InGaP host for intermediate-band solar cells

4. Dependence of quantum dot photocurrent on the carrier escape nature in InAs/GaAs quantum dot solar cells

5. Analysis of InAs/GaAs quantum dot solar cells using Suns- V oc measurements

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure;Applied Physics Letters;2023-04-24

2. A theoretical study of InAs/InP and InAs/GaAs QDs systems: Formation mechanisms and photoluminescence characterization;Materials Today: Proceedings;2023

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