Influence of germanium doping on the mechanical strength of Czochralski silicon wafers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2943272
Reference23 articles.
1. Dislocations Preferentially Generated in Compressed Regions of Saddle-Shaped Deformed, Precipitation-Softened, Czochralski-Grown Silicon Wafers
2. Effects of nitrogen on dislocations in silicon during heat treatment
3. Influence of oxygen precipitates on the warpage of annealed silicon wafers
4. Shallow thermal donors in silicon doped with isotopic oxygen
5. Germanium effect on void defects in Czochralski silicon
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2. Investigating impurities and surface properties in germanium co-doped multi-crystalline silicon: a combined computational and experimental investigation;Journal of Materials Science: Materials in Electronics;2024-01
3. Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities;Applied Sciences;2022-08-15
4. Stress and Strain Prediction of Zirconium Nitride under Oxygen Doping and Vacancy Introduction;Condensed Matter;2021-08-18
5. Mechanical strength of Czochralski silicon crystal: Effects of co-doping germanium and nitrogen;Acta Physica Sinica;2021
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