Characterization of the local mechanical stress induced during the Ti and Co/Ti salicidation in sub-0.25 μm technologies
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371359
Reference18 articles.
1. Silicides for integrated circuits: TiSi2 CoSi2
2. Low-resistance self-aligned Ti-silicide technology for sub-quarter micron CMOS devices
3. Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation
4. Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/
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