Evaluation of Carbon Interstitial in C-ion Implanted ZnO Bulk Single Crystals by a Nuclear Reaction Analysis Study: An Origin of Low Resistivity-Reference-Cited by-同舟云学术

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Evaluation of Carbon Interstitial in C-ion Implanted ZnO Bulk Single Crystals by a Nuclear Reaction Analysis Study: An Origin of Low Resistivity

Published:2011 Issue: Volume: Page:
ISSN:0094-243X
Container-title:AIP Conference Proceedings
language:
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Author:

Izawa Y.,Matsumoto K.,Oga T.,Kuriyama K.,Kushida K.,Kinomura A.,Ihm Jisoon,Cheong Hyeonsik

Publisher

AIP

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-situ construction of carbon-doped ZnO hollow spheres for highly efficient dimethylamine detection;Sensors and Actuators B: Chemical;2022-10

2. In-Situ Construction of Carbon-Doped ZnO Hollow Spheres for Highly Efficient Dimethylamine Detection;SSRN Electronic Journal;2022

3. Lattice sites of Na dopants in ZnO;Semiconductor Science and Technology;2016-07-28

4. Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals;AIP Conference Proceedings;2013

5. Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy;Journal of Applied Physics;2012-12-15

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