Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy
Author:
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4769801
Reference23 articles.
1. Recent advances in processing of ZnO
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4. Present status of transparent conducting oxide thin-film development for Indium-Tin-Oxide (ITO) substitutes
5. The transparence comparison of Ga- and Al-doped ZnO thin films
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