Origin of gap states at initial stage oxidation on Si(001)2×1:H and water adsorption on Si(001)2×1: A theoretical study
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1505123
Reference15 articles.
1. Gap state formation during the initial oxidation of Si(100)-2×1
2. Theoretical study of luminescence degradation by oxidation in Si(001) and Si(111) ultrathin films: Gap states induced by oxidation
3. Interplay of the monohydride phase and a newly discovered dihydride phase in chemisorption of H on Si(100)2 × 1
4. Theoretical study of luminescence enhancement in oxidized Si(001) ultrathin films
5. Direct pathway for sticking/desorption ofH2on Si(100)
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1. Benzaldehyde on Water-Saturated Si(001): Reaction with Isolated Silicon Dangling Bonds versus Concerted Hydrosilylation;The Journal of Physical Chemistry C;2014-04-30
2. Isolated Silicon Dangling Bonds on a Water-Saturated n+-Doped Si(001)-2 × 1 Surface: An XPS and STM Study;The Journal of Physical Chemistry C;2011-03-25
3. Deposition of Palladium from a Cylcopentadienyl-allyl-palladium Precursor on Si-Based Substrates with Various Pretreatments: The Role of Surface Si-OH and Si-H Species Studied by X-Ray Photoelectron Spectroscopy;Chemical Vapor Deposition;2005-09
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