Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration
Author:
Affiliation:
1. Tyndall National Institute, University College Cork, Cork, Ireland
2. Department of Chemistry, University College Cork, Cork, Ireland
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4973971
Reference25 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
2. III–V nMOSFETs – Some issues associated with roadmap worthiness (invited)
3. Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications
4. Identification of defect levels at As/oxide interfaces through hybrid functionals
5. Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices
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1. The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface;Technical Physics Letters;2021-12-15
2. Deep levels in metal–oxide–semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates;Semiconductor Science and Technology;2019-06-21
3. Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate;Applied Surface Science;2018-06
4. Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs(001);Microelectronic Engineering;2017-06
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