III–V nMOSFETs – Some issues associated with roadmap worthiness (invited)-Reference-Cited by-同舟云学术

III–V nMOSFETs – Some issues associated with roadmap worthiness (invited)

Published:2011-07 Issue:7 Volume:88 Page:1070-1075
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Thayne Iain,Bentley Steven,Holland Martin,Jansen Wout,Li Xu,Macintyre Douglas,Thoms Stephen,Shin Byungha,Ahn Jaesoo,McIntyre Paul

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. www.itrs.net; 24th March 2011.

2. http://www.ioffe.ru/SVA/NSM/Semicond/index.html; 24th March 2011.

3. Semiconductor Material and Device Characterization;Schroder,2006

4. A transmission line model for silicided diffusions: Impact on the performance of VLSI circuits

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial n++-InGaAs ultra-shallow junctions for highly scaled n-MOS devices;Applied Surface Science;2019-12

2. Deep levels in metal–oxide–semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates;Semiconductor Science and Technology;2019-06-21

3. Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration;Applied Physics Letters;2017-01-16

4. Impact of channel thickness on the relocation of valleys in nano silicon and germanium DG-MOSFETs with alternative wafer orientation;Chinese Journal of Physics;2016-06

5. Emerging Applications for High K Materials in VLSI Technology;Materials;2014-04-10