NiGa2O4 interfacial layers in NiO/Ga2O3 heterojunction diodes at high temperature
Author:
Affiliation:
1. National Renewable Energy Laboratory 1 , Golden, Colorado 80401, USA
2. Colorado School of Mines 2 , Golden, Colorado 80401, USA
3. Department of Materials Science and Engineering, The Ohio State University 3 , Columbus, Ohio 43210, USA
Abstract
Funder
Advanced Materials and Manufacturing Technologies Office
National Renewable Energy Laboratory
Publisher
AIP Publishing
Link
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0194540/19900779/173512_1_5.0194540.pdf
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4. Recent progress of Ga2O3 power technology: Large-area devices, packaging and applications;Jpn. J. Appl. Phys.,2023
5. Fabrication and interfacial electronic structure of wide bandgap NiO and Ga2O3 p–n heterojunction;ACS Appl. Electron. Mater.,2020
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