Temperature-dependent retardation effect of dopants on oxygen diffusion in heavily doped Czochralski silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126981
Reference10 articles.
1. Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers
2. Temperature dependence of interstitial oxygen diffusion in antimony‐doped Czochralski silicon
3. Secondary ion mass spectroscopy determination of oxygen diffusion coefficient in heavily Sb doped Si
4. Coexistence of Two Types of Nucleation Sites for Oxygen Precipitates in Czochralski Silicon
5. Determination of Conversion Factor for Infrared Measurement of Oxygen in Silicon
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