Coexistence of Two Types of Nucleation Sites for Oxygen Precipitates in Czochralski Silicon-Reference-Cited by-同舟云学术

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Coexistence of Two Types of Nucleation Sites for Oxygen Precipitates in Czochralski Silicon

Published:1992-08-15 Issue:Part 1, No. 8 Volume:31 Page:2519-2526
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamanaka Hideki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Practical Evaluation Method of Oxygen Precipitation in the Czochralski Silicon;ECS Transactions;2016-08-25

2. Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction;Applied Physics Letters;2014-09-15

3. Two Paths of Oxide Precipitate Nucleation in Silicon;Solid State Phenomena;2007-10

4. Oxygen-dislocation interactions in silicon at temperatures below 700 °C: Dislocation locking and oxygen diffusion;Journal of Applied Physics;2001-05

5. Temperature-dependent retardation effect of dopants on oxygen diffusion in heavily doped Czochralski silicon;Applied Physics Letters;2000-07-17

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