Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1337939
Reference11 articles.
1. High-quality MNS capacitors prepared by jet vapor deposition at room temperature
2. Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition
3. Silicon nitride film growth for advanced gate dielectric at low temperature employing high-density and low-energy ion bombardment
4. Substrate bias effects on low temperature polycrystalline silicon formation using electron cyclotron resonance SiH4/H2 plasma
5. Deposition of SiNx:H thin films by the electron cyclotron resonance and its application to Al/SiNx:H/Si structures
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