The effect of gas‐phase stoichiometry on deep levels in vapor‐grown GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89769
Reference13 articles.
1. Effect of gas‐phase stoichiometry on the minority‐carrier diffusion length in vapor‐grown GaAs
2. Vapor Deposition of GaP for High‐Efficiency Yellow Solid‐State Lamps
3. The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and Phosphine
4. Comparison of Zn‐doped GaAs layers prepared by liquid‐phase and vapor‐phase techniques, including diffusion lengths and photoluminescence
5. A correlation method for semiconductor transient signal measurements
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