Boron distribution in the core of Si nanowire grown by chemical vapor deposition-Reference-Cited by-同舟云学术

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

Published:2012-05 Issue:9 Volume:111 Page:094909
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chen Wanghua,Dubrovskii Vladimir G.,Liu Xiaolong,Xu Tao,Lardé Rodrigue,Philippe Nys Jean,Grandidier Bruno,Stiévenard Didier,Patriarche Gilles,Pareige Philippe

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4714364

Reference30 articles.

1. Colloquium: Structural, electronic, and transport properties of silicon nanowires

2. Diameter-dependent dopant location in silicon and germanium nanowires

3. Growth of Si nanowires on micropillars for the study of their dopant distribution by atom probe tomography

4. Obtaining Uniform Dopant Distributions in VLS-Grown Si Nanowires

5. Segregation Behaviors and Radial Distribution of Dopant Atoms in Silicon Nanowires

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