Temperature and substrate dependence of Ar sputtering of CoSi2thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351385
Reference13 articles.
1. Surface structure of thin epitaxialCoSi2grown on Si(111)
2. Formation of thin films of CoSi2: Nucleation and diffusion mechanisms
3. Algorithms for the rapid simulation of Rutherford backscattering spectra
4. Studies of temperature and flux dependences of sputtering yield of nickel from two-layered films of Ni-Ni3C
5. Surface‐layer composition changes in sputtered alloys and compounds
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of sputtering input powers on CoSi2 thin films prepared by magnetron sputtering;Materials & Design;2005-06
2. Plasma etching of ternary silicide top layers;Microelectronic Engineering;2000-01
3. Preferential sputtering effects in thin film processing;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-07
4. Patterning of Silicide Layers by Local Oxidation;MRS Proceedings;1995
5. Preferential sputtering of silicon from metal silicides at elevated temperatures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-07
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