Influence of background concentration induced field on the emission rate signatures of an electron trap in zinc oxide Schottky devices

Author:

Noor Hadia,Klason P.,Faraz S. M.,Nur O.,Wahab Q.,Willander M.,Asghar M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Resistance switching characteristics of Ag/ZnO/graphene resistive random access memory;Vacuum;2023-01

2. Glow of own defects in ZnO polycrystals;8th International Congress on Energy Fluxes and Radiation Effects;2022-11-14

3. Analysis of the carrier transport mechanism and barrier height formation of graphene/Zr–ZnO Schottky contact by I-V-T;Materials Science in Semiconductor Processing;2020-02

4. Investigation on deep level defects in polycrystalline ZnO thin films;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-05

5. Electrical characteristics and deep level traps study of Au/ZnO:H Schottky diodes;Superlattices and Microstructures;2014-11

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