Resistance switching characteristics of Ag/ZnO/graphene resistive random access memory
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference54 articles.
1. The future of memristors: materials engineering and neural networks;Sun;Adv. Funct. Mater.,2020
2. Forgetting memristors and memristor bridge synapses with long- and short-term memories;Chen;Neurocomputing,2021
3. Introduction to flash memory;Bez;Proc. IEEE,2003
4. Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices;Celano;Nano Lett.,2014
5. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling;Ielmini;Semicond. Sci. Technol.,2016
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