Effects of deposition temperature of insulator films on the electrical characteristics of InP metal‐insulator‐semiconductor field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99138
Reference8 articles.
1. Inversion-mode InP MISFET employing phosphorus-nitride gate insulator
2. Chemical vapor deposition and characterization of phosphorus nitride (P3N5) gate insulators for InP metal‐insulator‐semiconductor devices
3. Chemical Vapor Deposition of Phosphorus Nitride and Related Compounds
4. Current-Drift Suppressed InP MISFETs with New Gate Insulator
5. Reduction of Interface States and Fabrication of p-Channel Inversion-Type InP-MISFET
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