Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks-Reference-Cited by-同舟云学术

Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks

Published:2012-07-23 Issue:4 Volume:101 Page:042901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pawlak M. A.,Swerts J.,Popovici M.,Kaczer B.,Kim M.-S.,Wang W.-C.,Tomida K.,Govoreanu B.,Delmotte J.,Afanas’ev V. V.,Schaekers M.,Vandervorst W.,Kittl J. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4737871

Reference12 articles.

1. High-k dielectrics for future generation memory devices (Invited Paper)

2. Atomic Layer Deposition and Electrical Properties of SrTiO[sub 3] Thin Films Grown Using Sr(C[sub 11]H[sub 19]O[sub 2])[sub 2], Ti(Oi-C[sub 3]H[sub 7])[sub 4], and H[sub 2]O

3. Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications

4. Atomic Layer Deposition of Strontium Titanate Films Using Sr([sup t]Bu[sub 3]Cp)[sub 2] and Ti(OMe)[sub 4]

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