Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3046116
Reference24 articles.
1. Indium nitride (InN): A review on growth, characterization, and properties
2. Proceedings of the International Workshop on Nitride Semiconductors (IWN’ 2000), IPAP Conference Series 1;Keller S.,2000
3. High current density InN∕AlN heterojunction field-effect transistor with a SiNx gate dielectric layer
4. MOVPE InN on a 3c‐SiC/Si(111) template formed by C + ‐ion implantation into Si(111)
5. A comparative study on MOVPE InN films grown on 3c-SiC/Si(111) and sapphire
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