Low-resistance Ni-based Schottky diodes on freestanding n-GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2799739
Reference20 articles.
1. Contact mechanisms and design principles for Schottky contacts to group-III nitrides
2. Investigation of the chemistry and electronic properties of metal/gallium nitride interfaces
3. GaN-based Schottky diodes for hydrogen sensing in transformer oil
4. Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates
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1. Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire;Optical Materials;2017-04
2. Metals on Semiconductors;Surfaces and Interfaces of Electronic Materials;2012-12-28
3. Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes;Applied Physics Letters;2010-12-13
4. Schottky metal-GaN interface KOH pretreatment for improved device performance;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-07
5. Free-standing gallium nitride Schottky diode characteristics and stability in a high-temperature environment;Semiconductor Science and Technology;2009-11-24
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