Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes-Reference-Cited by-同舟云学术

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Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes

Published:2010-12-13 Issue:24 Volume:97 Page:242103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lim Wantae,Jeong Jae-Hyun,Lee Jae-Hoon,Hur Seung-Bae,Ryu Jong-Kyu,Kim Ki-Se,Kim Tae-Hyung,Song Sang Yeob,Yang Jong-In,Pearton S. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3525931

Reference23 articles.

1. Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers

2. Temperature dependence of impact ionization in AlGaN–GaN heterostructure field effect transistors

3. Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation

4. First AlGaN/GaN MOSFET with photoanodic gate dielectric

5. Analysis of the current–voltage characteristics of the Pd/Au Schottky structure on n-type GaN in a wide temperature range

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3. Asymmetric Metal–Semiconductor–Metal Al0.24Ga0.76N UV Sensors with Surface Passivation Effect Under Local Joule Heating;JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY;2023-11-30

4. Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer;Semiconductor Science and Technology;2023-08-03

5. GaN-based quasi-vertical Schottky barrier diode hybridized with p-NiO layer to achieve 1.1 kV breakdown voltage and enhance the current spreading effect;Applied Physics Express;2022-07-19

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