Transport properties of hydrogenatedp‐GaInAs doped with carbon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363060
Reference28 articles.
1. Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy
2. MOMBE growth and characterization of heavily carbon-doped InGaAs
3. Growth of carbon‐dopedp‐type InxGa1−xAs (0
4. Carbon incorporation in MOMBE-grown Ga0.47In0.53As
5. Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interaction of Hydrogen with Impurities and Defects in Semiconductors;Solid State Phenomena;2001-12
2. Hydrogen in Be-doped GaInAsP lattice matched to InP: diffusion and interactions with dopants;Semiconductor Science and Technology;1999-12-01
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