Improvement of the interface quality during thermal oxidation of Al0.98Ga0.02As layers due to the presence of low-temperature-grown GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126925
Reference19 articles.
1. Lateral oxidation of buried AlxGa1−xAs layers in a wet ambient
2. Barrier-layer-thickness control of selective wet oxidation of AlGaAs for embedded optical elements
3. Low-temperature-grown GaAs enhanced wet thermal oxidation of Al0.98Ga0.02As
4. Multiple-wavelength vertical-cavity laser arrays based on postgrowth lateral-vertical oxidation of AlGaAs
5. Huge birefringence in selectively oxidized GaAs/AlAs optical waveguides
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