Barrier-layer-thickness control of selective wet oxidation of AlGaAs for embedded optical elements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119028
Reference9 articles.
1. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
2. Native‐oxide defined ring contact for low threshold vertical‐cavity lasers
3. Buried refractive microlenses formed by selective oxidation of AlGaAs
4. Vertical-cavity surface-emitting lasers with integrated refractive microlenses
5. Low threshold voltage vertical-cavity lasers fabricated by selective oxidation
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2. Optimal control of AlAs oxidation via digital alloy heterostructure compositions;Journal of Physics D: Applied Physics;2009-08-17
3. Using the Taguchi method to improve the brightness of AlGaInP MQW LED by wet oxidation;IEEE Photonics Technology Letters;2006-08
4. Oxidized AlGaAs angle reflector and waveguide for optical interconnects;Frontiers in Optics 2004/Laser Science XXII/Diffractive Optics and Micro-Optics/Optical Fabrication and Testing;2004
5. Oxidation kinetics of AlAs and (AlGa)As layers in GaAs-based diode laser structures: comparative analysis of available experimental data;Semiconductor Science and Technology;2003-11-25
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