Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K-Reference-Cited by-同舟云学术

Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

Published:2020-06-15 Issue:24 Volume:116 Page:243502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cassé Mikaël¹^ORCID,Cardoso Paz Bruna¹,Ghibaudo Gérard²^ORCID,Poiroux Thierry¹^ORCID,Vincent Emmanuel³,Galy Philippe³,Juge André³,Gaillard Fred¹,de Franceschi Silvano⁴^ORCID,Meunier Tristan⁵^ORCID,Vinet Maud¹^ORCID

Affiliation:

1. CEA-Leti, Université Grenoble Alpes, MINATEC, 38054 Grenoble, France

2. CNRS, IMEP-LAHC, Université Grenoble Alpes, MINATEC, 38016 Grenoble, France

3. STMicroelectronics, 38920 Crolles, France

4. CEA-IRIG, Université Grenoble Alpes, MINATEC, 38054 Grenoble, France

5. CNRS, Institut Néel, Université Grenoble Alpes, 38042 Grenoble, France

Funder

ECSEL Research and Innovation Action

NANO2022

H2020 European Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0007100

Reference24 articles.

1. MOSFET Operation at 4.2 K

2. MOST's at cryogenic temperatures

3. Device and Circuit Cryogenic Operation for Low Temperature Electronics

4. Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration

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