Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulations-Reference-Cited by-同舟云学术

Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulations

Published:2022-08 Issue: Volume:194 Page:108355
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kriekouki Ioanna^ORCID,Beaudoin Félix,Philippopoulos Pericles,Zhou Chenyi,Camirand Lemyre Julien,Rochette Sophie,Mir Salvador,Barragan Manuel J.,Pioro-Ladrière Michel,Galy Philippe

Funder

Canada First Research Excellence Fund

Ministere de l'Economie et de l'Innovation du Quebec

Natural Sciences and Engineering Research Council of Canada

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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