Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method-Reference-Cited by-同舟云学术

Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method

Published:2015-04-20 Issue:16 Volume:106 Page:162402
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Thomas Luc,Jan Guenole,Le Son,Wang Po-Kang

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4918682

Reference24 articles.

1. Thermal Fluctuations of a Single-Domain Particle

2. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

3. Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Field-free manipulation of exchange bias in perpendicularly magnetized Pt/Co/IrMn structures by spin-orbit torque;Physical Review Materials;2024-06-17

2. U-MRAM PUF: A Novel Unipolar-MRAM for Power and Area Efficient Hardware Root of Trust;2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA);2024-04-22

3. Modeling Methodology for Thermal Stability Factor in Spin Transfer Torque Magneto-Resistive Random Access Memories;IEEE Transactions on Electron Devices;2024-03

4. Dual QSPI 8Gb STT-MRAM For Space Applications;2023 International Electron Devices Meeting (IEDM);2023-12-09

5. Linear-response analysis of thermal spin-transfer torque and Seebeck coefficients in diverse superlattice magnetic tunnel junctions;Journal of Magnetism and Magnetic Materials;2023-12