Capped versus capless heat treatment of molecular beam epitaxial GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93662
Reference9 articles.
1. Study of electron traps inn‐GaAs grown by molecular beam epitaxy
2. Influence of active-layer width on the performance of homojunction and single-heterojunction GaAs light-emitting diodes
3. Proximate capless annealing of GaAs using a controlled‐excess As vapor pressure source
4. The analysis of exponential and nonexponential transients in deep‐level transient spectroscopy
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2. Electronic and isochronal annealing properties of electron traps in rapid thermally annealed SiO2-capped n-type GaAs epitaxial layers;Journal of Applied Physics;2000-11
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5. Effects of annealing, using a plasma‐excited chemical vapor deposition SiN film as a cap, on the carrier density of AlGaAs/GaAs heterostructures and Si‐doped GaAs;Journal of Applied Physics;1995-10
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