Composition and resistivity changes of reactively sputtered W–Si–N thin films under vacuum annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2166691
Reference22 articles.
1. Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethylamido)tungsten and ammonia
2. In situ barrier formation using rapid thermal annealing of a tungsten nitride/polycrystalline silicon structure
3. Evaluation of LPCVD MeSiN (MeTa, Ti, W, Re) diffusion barriers for Cu metallizations
4. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization
5. Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizations
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