Strain, alloy composition, and lattice relaxation measured by optical‐absorption spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358629
Reference9 articles.
1. Relaxation in InxGa1-xAs/InP for compressive and tensile strain
2. Theoretical gain of strained-layer semiconductor lasers in the large strain regime
3. Composition modulation and inhomogeneous strain field inInxGa1−xAs/InP strained layers
4. Piezo-Electroreflectance in Ge, GaAs, and Si
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1. Structure of Zn–Se–Te system with submonolayer insertion of ZnTe grown by migration enhanced epitaxy;Journal of Applied Physics;2006-03-15
2. Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers;Journal of Applied Physics;1997-08
3. Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy;Journal of Applied Physics;1997-05-15
4. Quantification by optical absorption of the coarse modulation observed by transmission electron microscopy in InGaAs layers grown on InP(100);Semiconductor Science and Technology;1996-09-01
5. Structural analysis of InGaAs tensile layers on InP;Materials Science and Technology;1996-02
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