Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress-Reference-Cited by-同舟云学术

Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress

Published:2009-09-28 Issue:13 Volume:95 Page:132101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Sangwon,Jeon Kichan,Park Jun-Hyun,Kim Sungchul,Kong Dongsik,Kim Dong Myong,Kim Dae Hwan,Kim Sangwook,Kim Sunil,Hur Jihyun,Park Jae Chul,Song Ihun,Kim Chang Jung,Park Youngsoo,Jung U-In

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3237169

Reference6 articles.

1. 3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

2. 42.2: World's Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT

3. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

4. Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

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