Statistical analysis of semiconductor devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1390499
Reference15 articles.
1. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study
2. Solution of the nonlinear Poisson equation of semiconductor device theory
3. Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltage
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