Impact of process variability in junctionless FinFETs due to random dopant fluctuation, gate work function variation, and oxide thickness variation
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab6bfb/pdf
Reference28 articles.
1. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
2. FinFETs and Other Multi-Gate Transistors
3. Review of FINFET technology
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