Oxygen Adsorption on Silicon Surfaces Observed via Electron Spin Resonance
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1702827
Reference8 articles.
1. Spin Resonance of Donors in Silicon
2. Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance Technique
3. Application of magnetic resonance techniques to the study of semiconductor surfaces
4. Paramagnetic Resonance of Defects Introduced Near the Surface of Solids by Mechanical Damage
5. Paramagnetic Centers Produced at the Silicon Surface by Heat-Treatment in Atmosphere Containing No Oxygen
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1. Comments on ‘EPR study of He-implanted Si’ by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaviani, Published in Mater. Sci. Eng. B73 (2000) 60–63;Materials Science and Engineering: B;2002-03
2. Electron-spin-resonance analysis of the natural intrinsicEXcenter in thermalSiO2on Si;Physical Review B;1995-02-15
3. Evidence for Defect Creation by Light Irradiation in CdSSe-Doped Glass;Japanese Journal of Applied Physics;1992-05-15
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