Maximal absorption in ultrathin TiN films for microbolometer applications

Author:

Luk Ting S.1ORCID,Xu Guangping2,Ross Willard1,Nogan John N.1ORCID,Scott Ethan A.1ORCID,Ivanov Sergei1ORCID,Niculescu Oana3ORCID,Mitrofanov Oleg4ORCID,Harris C. Thomas1ORCID

Affiliation:

1. Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

2. Geochemistry Department, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

3. Department of Engineering, University of Cambridge, Cambridge, Cambridgeshire CB3 0FA, United Kingdom

4. Electronic and Electrical Engineering Department, University College London, London WC1E 7JE, United Kingdom

Abstract

Ultrathin light absorbers present a viable route toward improving the specific detectivity and response time of microbolometers. However, for an ultrathin film to absorb light efficiently, the dielectric function of the film and its thickness must satisfy strict requirements. We experimentally demonstrate an average absorptance of 48% ± 2.5% in the 8–13 μm (769–1250 cm−1) spectral range for 10 nm thick titanium nitride (TiN), a value bordering on the 50% fundamental absorptance limit for a suspended thin film. The heat capacity per unit area of this absorber is only 1.2 × 10−6 J/K/cm2, which is beneficial for improving the response time of a microfabricated bolometer. We also show that a sufficient condition for reaching maximal absorption in an ultrathin film is that ε″ ≫ |ε′|.

Funder

Sandia National Laboratories

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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