Nano-lithography free formation of high density Ge-on-insulator network for epitaxial template
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3691258
Reference19 articles.
1. Molecular Beam Epitaxy of Silicon-Based Heterostructure and Its Application to Novel Devices*
2. High-Performance $\hbox{GeO}_{2}/\hbox{Ge}$ nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping
3. High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3
4. Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique
5. Source–Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications
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1. Novel growth techniques of group-IV based semiconductors on insulator for next-generation electronics;Japanese Journal of Applied Physics;2017-04-18
2. Large grain growth of Ge-rich Ge1−xSnx(x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water;Applied Physics Letters;2014-02-10
3. Formation of Giant SiGe Crystals on Insulator by Self-Organized-Seeding Rapid-Melting Growth;Applied Mechanics and Materials;2013-12
4. Performance Enhancement on p-Channel Charge-Trapping Flash Memory Device With Epitaxial Si/Ge Super-Lattice Channel;IEEE Electron Device Letters;2013-05
5. An ultra-thin buffer layer for Ge epitaxial layers on Si;Applied Physics Letters;2013-03-25
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