Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1575929
Reference31 articles.
1. GaN, AlN, and InN: A review
2. Influence of growth conditions on electrical characteristics of AlN on SiC
3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
4. GaN epitaxial growth on sapphire (0 0 0 1): the role of the substrate nitridation
5. GaN grown by molecular beam epitaxy at high growth rates using ammonia as the nitrogen source
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