Structure, chemistry, and band bending at Se‐passivated GaAs(001) surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103887
Reference24 articles.
1. Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces
2. Effects of passivating ionic films on the photoluminescence properties of GaAs
3. Enhanced electronic properties of GaAs surfaces chemically passivated by selenium reactions
4. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
5. Near‐ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S⋅9H2O regrowth
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