Modifications of the electronic structure of GaSb surface by chalcogen atoms: S, Se, and Te
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1790572
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1. Passivation techniques for InAs/GaSb strained layer superlattice detectors;Laser & Photonics Reviews;2012-03-19
2. Study of Short- and Long-Term Effectiveness of Ammonium Sulfide as Surface Passivation for InAs/GaSb Superlattices Using X-Ray Photoelectron Spectroscopy;Journal of Electronic Materials;2010-06-11
3. Density Functional Theory Study of Ligand Binding on CdSe (0001), (0001̄), and (112̄0) Single Crystal Relaxed and Reconstructed Surfaces: Implications for Nanocrystalline Growth;The Journal of Physical Chemistry B;2006-08-23
4. Properties of the CdSe(0001), (0001̄), and (112̄0) Single Crystal Surfaces: Relaxation, Reconstruction, and Adatom and Admolecule Adsorption;The Journal of Physical Chemistry B;2005-09-22
5. Improved characteristics for Au∕n-GaSb Schottky contacts through the use of a nonaqueous sulfide-based passivation;Applied Physics Letters;2004
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