Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory-Reference-Cited by-同舟云学术

Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory

Published:2012-04 Issue:7 Volume:111 Page:07E336
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Matsunaga Shoun,Katsumata Akira,Natsui Masanori,Endoh Tetsuo,Ohno Hideo,Hanyu Takahiro

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3677875

Reference21 articles.

1. Leakage sources and possible solutions in nanometer CMOS technologies

2. Energy dissipation and transport in nanoscale devices

3. 2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read

4. D. Halupka, S. Huda, W. Song, A. Sheikholeslami, K. Tsunoda, C. Yoshida, and M. Aoki, IEEE Int. Solid-State Circuits Conf. 2010, 256.

5. K. Tsuchida, T. Inaba, K. Fujita, Y. Ueda, T. Shimizu, Y. Asao, T. Kajiyama, M. Iwayama, K. Sugiura, S. Ikegawa, T. Kishi, T. Kai, M. Amano, N. Shimomura, H. Yoda, and Y. Watanabe, IEEE Int. Solid-State Circuits Conf. 2010, 258.

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. DMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems;2022 IEEE 13th Latin America Symposium on Circuits and System (LASCAS);2022-03-01

2. Design of Magnetic Non-Volatile TCAM With Priority-Decision in Memory Technology for High Speed, Low Power, and High Reliability;IEEE Transactions on Circuits and Systems I: Regular Papers;2020-02

3. From MTJ Device to Hybrid CMOS/MTJ Circuits: A Review;IEEE Access;2020

4. A Novel MTJ-Based Non-Volatile Ternary Content-Addressable Memory for High-Speed, Low-Power, and High-Reliable Search Operation;IEEE Transactions on Circuits and Systems I: Regular Papers;2019-04

5. Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) technology;Advances in Non-Volatile Memory and Storage Technology;2019