Behavior of hydrogen in InN investigated in real time exploiting spectroscopic ellipsometry-Reference-Cited by-同舟云学术

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Behavior of hydrogen in InN investigated in real time exploiting spectroscopic ellipsometry

Published:2007-08-20 Issue:8 Volume:91 Page:081917
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Losurdo Maria,Giangregorio Maria M.,Bruno Giovanni,Kim Tong-Ho,Choi Soojeong,Brown April S.,Pettinari Giorgio,Capizzi Mario,Polimeni Antonio

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2775082

Reference20 articles.

1. First-principles calculations for defects and impurities: Applications to III-nitrides

2. In-Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors

3. Tunable variation of the electron effective mass and exciton radius in hydrogenatedGaAs1−xNx

4. Shallow donor state of hydrogen in indium nitride

5. Passivation and Doping due to Hydrogen in III-Nitrides

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Startified thermal degradation in blue InGaN quantum well structures: P-GaN growth temperature and its influence on quantum well optical properties;Journal of Alloys and Compounds;2024-05

2. Effect of N2/H2 plasma on the growth of InN thin films on sapphire by hollow-cathode plasma-assisted atomic layer deposition;Journal of Vacuum Science & Technology A;2020-12

3. Genesis of “Solitary Cations” Induced by Atomic Hydrogen;Advanced Functional Materials;2015-07-27

4. Conductivity in transparent oxide semiconductors;Journal of Physics: Condensed Matter;2011-08-03

5. Photoluminescence Properties of Non-Tapered InN Nanorods Grown by Plasma-Assisted Metalorganic Chemical Vapor Phase Deposition;Journal of Nanoscience and Nanotechnology;2010-10-01

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