Wavelength switching in narrow oxide stripe InGaAs‐GaAs‐AlGaAs strained‐layer quantum well heterostructure lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105015
Reference14 articles.
1. Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers
2. Narrow stripe graded barrier single quantum well lasers-threshold current considerations
3. Widely separate wavelength switching of single quantum well laser diode by injection‐current control
4. Emission spectra of single quantum well lasers with inhomogeneous current injection
5. Conditions for uniform growth of GaAs by metalorganic chemical vapor deposition in a vertical reactor
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2. Cavity size and temperature dependence of stimulated emission in single Zn1−xCdxSe/ZnSe quantum-well lasers;Superlattices and Microstructures;1999-01
3. Second quantized state lasing and gain spectra measurements in n-type modulation doped GaAs-AlGaAs quantum-well lasers;IEEE Journal of Quantum Electronics;1995
4. Low Threshold Current Density Wavelength Shifting between N=1 and N=2 Transitions in n-Type Modulation Doped GaAs/AlGaAs Quantum Well Lasers;Guided-Wave Optoelectronics;1995
5. Contact reflectivity effects on thin p-clad InGaAs single quantum-well lasers;IEEE Photonics Technology Letters;1994-12
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