1. Physics of the ferroelectric nonvolatile memory field effect transistor
2. Non-volatile memory technologies: emerging concepts and new materials
3. L. V. Hai, M. Takahashi, and S. Sakai, in Proceedings of the 3rd IEEE International Memory Workshop (IEEE, 2011), p–1.
4. M. Takahashi, X. Zhang, L. V. Hai, K. Yan, W. Zhang, and K. Miyaji, in Proceedings of the 2011 International Symposium on Integrated Functionalities (Taylor and Francis, 2011), p. 205.